• Title of article

    Quality and mechanical reliability assessment of wafer-bonded micromechanical components

  • Author/Authors

    Petzold، M. نويسنده , , Bagdahn، J. نويسنده , , Katzer، D. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -1102
  • From page
    1103
  • To page
    0
  • Abstract
    Strength tests and fracture mechanics models for Silicon wafer-bonded components are presented which can be applied during the development of bonding technologies, for the yield improvement and failure analysis as well as for the reliability assessment of micromechanical sensors and actuators. Special attention is given to the influences of atomic bonding strength, the interface voids and the notches caused by etching steps prior to bonding on the fracture limit. If wafer-bonded interfaces are exposed to a mechanical loading for an extended time, e.g. in the order of months or years, stress corrosion effects decrease the bonding strength. As a consequence, stressed sensors and actuators fabricated by wafer bonding can suddenly fail during application after a load-dependent lifetime. Based on an appropriate fracture mechanics model, the time-to-failure data could be theoretically predicted. © 1999 Elsevier Science Ltd. All rights reserved.
  • Keywords
    Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    13101