High drivability μc-Si TFT device with a compound channel layer structure Original Research Article

In this paper, low-temperature deposited microcrystalline silicon (μc-Si) was applied to make a high-performance thin film transistor (TFT). The a-Si film is used as a carrier-blocking layer inserted into μc-Si TFT for suppressing unwanted OFF-state current. This compound TFT can achieve higher driving current (1.47×106 A) than the conventional a-Si TFT. Other parameters such as threshold voltage (Vth), sub-threshold swing (SS) and field effective carrier mobility value were 1.34 V, 1.32 V/dec and 1.05 cm2/V s, respectively. It is noted that all the process for compound TFT are compactable with current a-Si industry.