Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2 Original Research Article

Undoped and p- and n-doped AgSbX2 (X=Se and Te) materials were synthesized by direct fusion technique. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 K. To enlighten electron transport behaviours observed in AgSbSe2 and AgSbTe2 compounds, electronic structure calculations have been performed by the Korringa–Kohn–Rostoker method as well as KKR with coherent potential approximation (KKR-CPA) for ordered (hypothetical AgX and SbX as well as AgSbX2 approximates) and disordered systems (Ag1−xSbxX), respectively. The calculated density of states in the considered structural cases shows apparent tendencies to opening the energy gap near the Fermi level for the stoichiometric AgSbX2 compositions, but a small overlap between valence and conduction bands is still present. Such electronic structure behaviour well agrees with the semimetallic properties of the analyzed samples.