Author/Authors :
K. Ishii، نويسنده , , M. Hoesch، نويسنده , , T. Inami، نويسنده , , K. Kuzushita، نويسنده , , K. Ohwada، نويسنده , , M. Tsubota، نويسنده , , Y. Murakami، نويسنده , , J. Mizuki، نويسنده , , and Y. Endoh، نويسنده , , K. Tsutsui، نويسنده , , T. Tohyama، نويسنده , , S. Maekawa، نويسنده , , K. Yamada، نويسنده , , T. Masui، نويسنده , , S. Tajima، نويسنده , , H. Kawashima، نويسنده , , J. Akimitsu، نويسنده ,
Abstract :
We report a Cu K -edge resonant inelastic X-ray scattering (RIXS) study of high-TcTc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [π,π][π,π] direction than the [π,0][π,0] direction. On the other hand, the resonance condition displays material dependence. The Mott gap persists in carrier-doped states. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker associated with the reduction of antiferromagnetic correlation and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer.
