Title of article :
Close space vapor transport method for Bi2Te3 thin films deposition: Influence of the type of substrate Original Research Article
Author/Authors :
O. Vigil-Gal?n، نويسنده , , F. Cruz-Gandarilla، نويسنده , , J. Sastre-Hernandez، نويسنده , , F. Roy، نويسنده , , E. S?nchez-Meza، نويسنده , , G. Contreras-Puente، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
6
From page :
365
To page :
370
Abstract :
Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature (Tsub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300–425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
Keywords :
A. Thin films , D. Electrical properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2009
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1310696
Link To Document :
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