• Title of article

    Close space vapor transport method for Bi2Te3 thin films deposition: Influence of the type of substrate Original Research Article

  • Author/Authors

    O. Vigil-Gal?n، نويسنده , , F. Cruz-Gandarilla، نويسنده , , J. Sastre-Hernandez، نويسنده , , F. Roy، نويسنده , , E. S?nchez-Meza، نويسنده , , G. Contreras-Puente، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    6
  • From page
    365
  • To page
    370
  • Abstract
    Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature (Tsub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300–425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
  • Keywords
    A. Thin films , D. Electrical properties
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2009
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1310696