Title of article
Close space vapor transport method for Bi2Te3 thin films deposition: Influence of the type of substrate Original Research Article
Author/Authors
O. Vigil-Gal?n، نويسنده , , F. Cruz-Gandarilla، نويسنده , , J. Sastre-Hernandez، نويسنده , , F. Roy، نويسنده , , E. S?nchez-Meza، نويسنده , , G. Contreras-Puente، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
365
To page
370
Abstract
Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature (Tsub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300–425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
Keywords
A. Thin films , D. Electrical properties
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2009
Journal title
Journal of Physics and Chemistry of Solids
Record number
1310696
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