A study of electrical properties of dislocation engineered Si processed by ultrasound Original Research Article

This work presents experimental study of electrical properties of dislocation engineered Si p–n junction before and after the influence of ultrasound waves. We have studied current–voltage characteristics in the dark and upon illumination for forward and reverse biases before and after ultrasound processing. By fitting the theoretically established current–voltage dependence to the experimentally measured ones, the diode ideality factor and saturation current have been estimated. It is found that current transport through the dislocation-engineered Si p–n junction can be controlled by generation-recombination or tunneling recombination mechanisms. Ultrasound is found to modulate electrical properties of the dislocation engineered Si.