Title of article :
Comprehensive study of high-Tc interface superconductivity
Original Research Article
Author/Authors :
G. Logvenov، نويسنده , , A. Gozar، نويسنده , , V.Y. Butko، نويسنده , , A.T. Bollinger، نويسنده , , N. Bozovic، نويسنده , , Z. Radovic، نويسنده , , I. Bozovic، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
Using ALL-MBE technique, we have synthesized different heterostructures consisting of an insulator La2CuO4 (I) and a metal La1.56Sr0.44CuO4 (M) layer neither of which is superconducting by itself. The M–I bilayers were superconducting with a critical temperature Tc≈30–36 K. This highly robust phenomenon is confined within 1–2 nm from the interface and is primarily caused by the redistribution of doped holes across the interface. In this paper, we present a comprehensive study of the interface superconductivity by a range of experimental techniques including transport measurements of superconducting properties.
Keywords :
A. Oxides , A. Thin films , B. Epitaxial growth , D. Superconductivity , D. Crystal structure
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids