Title of article :
Electrical properties of TlGaTe2 single crystals under hydrostatic pressure Original Research Article
Author/Authors :
S.N. Mustafaeva، نويسنده , , Sh.G. Gasymov، نويسنده , , E.M. Kerimova، نويسنده , , M.M. Asadov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
657
To page :
660
Abstract :
The effect of hydrostatic pressure (up to 0.82 GPa) on the electric properties of chain TlGaTe2 single crystals has been investigated in the temperature range 77–296 K. It has been shown that pressure leads to a considerable increase of conductivity (σ⊥) across the chains of TlGaTe2 single crystals. Parameters of localized states in the band gap of TlGaTe2 single crystal according to the low-temperature electrical measurements were obtained at various pressures.
Keywords :
A. Semiconductors , C. High pressure , B. Crystal Growth
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2011
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1311359
Link To Document :
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