Thermally stimulated current measurements in undoped Ga3InSe4 single crystals Original Research Article

The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10–300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonable results under the model that assumes slow retrapping. The capture cross-section of the trap was determined as 1.0×10−25 cm2 with concentration of 1.4×1017 cm−3.