Phase evolution and microwave dielectric properties of Bi3SbO7 ceramic Original Research Article

The Bi3SbO7 ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase α-Bi3SbO7 was formed at about 890 °C and it started to transform to high temperature phase β-Bi3SbO7 at about 960 °C. Microwave dielectric constants of α-Bi3SbO7 ceramic and β-Bi3SbO7 ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of α-Bi3SbO7 ceramic was near zero and TCF of β-Bi3SbO7 ceramic was about −120 ppm/°C. The Bi3SbO7 ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition.The Bi3SbO7 ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase α-Bi3SbO7 was formed at about 890 °C and it started to transform to high temperature phase β-Bi3SbO7 at about 960 °C. Microwave dielectric constants of α-Bi3SbO7 ceramic and β-Bi3SbO7 ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of α-Bi3SbO7 ceramic was near zero and TCF of β-Bi3SbO7 ceramic was about −120 ppm/°C. The Bi3SbO7 ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition.