Title of article :
Synthesis, electrical and optical properties of CuNdO2 compound
Original Research Article
Author/Authors :
Guobo Dong، نويسنده , , Ming Zhang، نويسنده , , Mei Wang، نويسنده , , Fang Fang Tang، نويسنده , , Hua Li، نويسنده , , Anping Huang، نويسنده , , Hui Yan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
CuNdO2, a p-type transparent conducting oxide has been synthesized by conventional solid-state reaction. The XRD and TEM results show that the pure delafossite phase is obtained, furthermore, the EDX results indicate the sample is obviously oxygen-rich. The p-type conduction of CuNdO2 was confirmed by Hall and Seebeck measurements. Carrier concentration and mobility at room temperature are around 1.38×1017 cm−3 and 1.24 cm2V−1s−1, respectively. On the other hand, the optical band gap of CuNdO2 is estimated to be around 3.14 eV, which agrees well with the theoretical result predicted by the first-principle calculation.
Keywords :
A. Semiconductors , D. Electrical properties , D. Optical properties
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids