Endoepitaxial growth of hexagonal-Fe13Ge8 islands on Cubic-Ge(001) Original Research Article

The growth and shape evolution of epitaxial Fe13Ge8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe13Ge8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe13Ge8 islands growing into the substrate along the inclined Ge(11̄1) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe13Ge8 islands formation on Ge(001).