Photoluminescent properties of Eu3+ and Dy3+ ions doped MgGa2O4 phosphors Original Research Article

Several concentrations Eu3+-doped and Dy3+-doped MgGa2O4 phosphors were prepared successfully by two-step firing synthesis. The sintered samples were characterized by means of X-ray diffraction (XRD) and fluorescence spectrophotometer. Little amount of rare earth doped will not change the host matrix structure and the maximum of the emission or excitation intensity of these phosphors will decrease as the concentration increasing for concentration quenching. The emissions of Eu3+ caused by the transitions of 5D0→7Fj (j=0, 1, 2, 3, 4) were observed. And there are three groups of emission at 480 nm, 575 nm and 665 nm occurring at the spectrum of Dy3+ ions, which shows that MgGa2O4 phosphors doped with nanostructures ions have the potentiality to be applied for white LEDs applications.