FSDP-related correlations in γ-irradiated chalcogenide semiconductor glasses: The case of glassy arsenic trisulphide g-As2S3 revised Original Research Article

Influence of high-energy γ-irradiation on the FSDP in XRD pattern is investigated at the example of g-As2S3. Spectroscopic measurements in the fundamental optical absorption edge regions were used to characterize the value of γ-induced changes through the observed darkening effect. It is concluded that γ-irradiation with ~3 MGy dose does not produce any detectable changes in the FSDP parameters, but leads to the appearance of satellite peaks at the left and right sides of the FSDP. Detailed analysis allows attributing of these peaks to crystalline As2O3 and S phases, which appear at the surface of g-As2S3 after prolonged γ-irradiation. Some correlations with the value of γ-induced optical changes in g-As2S3 were detected only for pre-FSDP.