Single-quantum well InGaN green light emitting diode degradation under high electrical stress

We performed a degradation study of high-brightness Nichia single-quantum well AIGaN/InGaN/GaN green light-emitting diodes (LEDs). The devices were subjected to high current electrical stress with current pulse amplitudes between I and 7 A and voltages between 10 and 70 V with a pulse length of 100 ns and a I kHz repetition rate. The study showed that when the current amplitude was increased above 6 A, a fast (about I s) degradation occurred, with a visible discharge between the p- and n-type electrodes. Subsequent failure analysis revealed severe damage to the metal contacts, which lead to the formation of shorts in the surface plane of the diode. For currents smaller than 6 A, a slow degradation was observed as a decrease in optical power and an increase in the reverse current leakage. However, a rapid degradation occurred between 24 and 100 h which was similar to the rapid degradation observed at higher currents. The failure analysis results indicate that the degradation process begins with carbonization of the plastic encapsulation material on the diode surface, which leads to the formation of a conductive path across the LED and subsequently to the destruction of the diode itself. © 1999 Elsevier Science Ltd. All rights reserved.