Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analysed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-ofT time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified UGBT structure increases when the temperature is reduced. © 1999 Elsevier Science Ltd. All rights reserved.