Title of article
Single chip bumping and reliability for flip chip processes
Author/Authors
Klein، M. نويسنده , , Oppermann، H. نويسنده , , Kalicki، R. نويسنده , , Aschenbrenner، R. نويسنده , , Reichi، H. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1388
From page
1389
To page
0
Abstract
A new functional AIG^As/GaAs heterostruclure-cmitter bipolar transistor (HEBT) with a pseudomorphic inGaAs/GaAs quantum-well (QW) base slrueturc is presented. Due to the insertion of an InGaAs QW between the emitter-base (E-B) junction, the valence band discontinuity can be enhanced. The excellent transistor characteristics including a high current gain of 280 and a low offset voltage of [00 mV are obtained. In addition, an interesting multiple S-shaped negative differential resistance (NDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect. ((•; 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Flip chip , Single chip bumping , Stud bumping , Rcliabilily , Wedge burnping , Palladium
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13163
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