Title of article :
Investigation into socketed CDM (SDM) tester parasitics
Author/Authors :
Gieser، H. نويسنده , , Chaine، M. نويسنده , , Verhaege، K. نويسنده , , Avery، L. نويسنده , , Bock، K. نويسنده , , Henry، L.G. نويسنده , , Meuse، T. نويسنده , , Brodbeck، T. نويسنده , , Barth، J. نويسنده , , KELLY، M. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-1530
From page :
1531
To page :
0
Abstract :
The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly impacts the SDM failure threshold voltage levels and may lead to miscorrelation and non-reproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitic to the total stress applied to the DUT. Our investigations indicate that the tester provides a 10-20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Operational amplifiers , Pulsed irradiation , LINAC , Time dependent phenomena , Relaxation
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13185
Link To Document :
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