Title of article :
Copper metallization reliability
Author/Authors :
Lloyd، J.R. نويسنده , , Clemens، J. نويسنده , , Snede، R. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated. Cu metalization testing procedures are described and the dangers of "overstressing" are explained in some detail, . 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Compact simulation , Protection structure , Bipolar transistor model , High current characteristic , ESD , HBM , Gate coupling
Journal title :
MICROELECTRONICS RELIABILITY
Journal title :
MICROELECTRONICS RELIABILITY
