Title of article
Copper metallization reliability
Author/Authors
Lloyd، J.R. نويسنده , , Clemens، J. نويسنده , , Snede، R. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1594
From page
1595
To page
0
Abstract
The electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated. Cu metalization testing procedures are described and the dangers of "overstressing" are explained in some detail, . 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Compact simulation , Protection structure , Bipolar transistor model , High current characteristic , ESD , HBM , Gate coupling
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13195
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