Title of article :
Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in AI-Si-Cu stripes
Author/Authors :
Witvrouw، A. نويسنده , , Bender، H. نويسنده , , Roussel، Ph. نويسنده , , Maex، K. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-1602
From page :
1603
To page :
0
Abstract :
The electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated. Cu metalization testing procedures are described and the dangers of "overstressing" are explained in some detail, . 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Saturation , Interconnects
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13197
Link To Document :
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