Title of article
Early electromigration effects and early resistance changes
Author/Authors
Munari، I. de نويسنده , , Impronta، M. نويسنده , , Scorzoni، A. نويسنده , , Kelaidis، N. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1646
From page
1647
To page
0
Abstract
This paper reviews different known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their effects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in AI-Cu lines of the present technology, 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Interconnects , Electromigration , Saturation
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13204
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