Title of article :
Early electromigration effects and early resistance changes
Author/Authors :
Munari، I. de نويسنده , , Impronta، M. نويسنده , , Scorzoni، A. نويسنده , , Kelaidis، N. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-1646
From page :
1647
To page :
0
Abstract :
This paper reviews different known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their effects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in AI-Cu lines of the present technology, 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Interconnects , Electromigration , Saturation
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13204
Link To Document :
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