A model for the channel noise of MESFETs including hot electron effects

Noise is an important consideration in the reliability of microelectronic circuits determining the sensitivity of the circuits and placing a lower limit on the regions of operation. Proper modeling of noise in integrated circuits is essential for reliable operation. A derivation is given for the channel noise coefficient of FETʹs operating in the saturation region. Some simple approximations are made for hot electron effects which can be incorporated into the derivation and accounted for by a numerical integration technique. Experimental results of measured and calculated noise coefficients are compared for depletion mode MESFETs of different gate lengths. This model gives a much more realistic representation of the channel noise coefficients for short gate length devices rather than the simple 2/3 value currently used in circuit simulations. © 1999 Elsevier Science Ltd. All rights reserved.