Title of article
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress
Author/Authors
Liou، J.J. نويسنده , , Fantini، F. نويسنده , , Cattani، L. نويسنده , , Rezazadeh، A.A. نويسنده , , Bashar، S.A. نويسنده , , Sheng، H. نويسنده , , Amin، F.A. نويسنده , , Khalid، A.H. نويسنده , , Sotoodeh، M. نويسنده , , Crouch، M.A. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1808
From page
1809
To page
0
Abstract
The reliability of inGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping impurities namely Zn, Be and C. The effect ofO+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Electromigration , Interconnects , Saturation
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13233
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