Title of article :
Recrystallization of Cu-poor CuInS2 assisted by metallic Cu or Ag
Author/Authors :
Humberto Rodriguez-Alvarez، نويسنده , , Roland Mainz، نويسنده , , Bjoern Marsen، نويسنده , , Hans-Werner Schock، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
803
To page :
806
Abstract :
We monitor the recrystallization of Cu-poor CuInS2 thin films assisted by pure Cu or pure Ag by means of real-time synchrotron-based polychromatic X-ray diffraction. In both cases a new microstructure is formed accompanied by an increase in grain size. In the case of Cu, the onset temperature of the thin-film recrystallization is higher than 370 °C. In the case of Ag, the thin-film recrystallization comes to an end at 270 °C. The Ag-assisted recrystallization occurs in the presence of the body-centered cubic β-Ag2S phase. We find that domain growth and diffusion of silver into the film occur simultaneously.
Keywords :
Recrystallization , Thin-film solar cells , Energy-dispersive X-ray diffraction
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2010
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Record number :
1334382
Link To Document :
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