• Title of article

    Effect of transition element doping on crystal structure of rare earth borosilicides REB44Si2

  • Author/Authors

    D. Berthebaud، نويسنده , , A. Sato، نويسنده , , Y. Michiue، نويسنده , , T. Mori، نويسنده , , A. Nomura، نويسنده , , T. Shishido، نويسنده , , K. Nakajima، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    6
  • From page
    1682
  • To page
    1687
  • Abstract
    On a previous study on samples of doped-YB44Si2, an improvement of thermoelectric properties has been achieved. Regarding the interesting effect of the doping of transition elements on the thermoelectric properties, a single crystal study has been carried out on Zn doped, Rh doped and Ni doped samples to assess how the transition element doping affects the crystal structure. Refinements were carried out based on the structural model solution of YB44Si2 reported in a previous study. Variations in the silicon contents were found in the doped single crystals. Splitting of partially occupied sites has also been detected for some of the doped samples. In this paper we present differences in the partial occupations of boron and silicon sites. Possibility of transition elements insertions based on the differences in crystal structures will be presented.
  • Keywords
    Borides , Crystals , Doping , Transition elements
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Serial Year
    2011
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Record number

    1335204