Effect of activation volume on the defect-induced superconductivity in semiconducting superlattices

We firstly verify our transition-state approaches by comparing our preliminary calculations for electronic transport resistance with previous available measurements in the heterostructure of semiconducting materials (PbTe/PbS). After the intensive computations, we illustrate the effect of activation volume and energy on the possible superconducting transition temperatures for superconducting interfaces in semiconducting superlattices (PbTe/PbS). The quantum chemistry approach we adopt has been successfully treated the defect-induced critical transport of many condensed electrons. Our results suggest that tuning activation volume is the efficient way to enhance the superconducting temperature.