Title of article :
Design and Simulation of High Tuning Range and High Quality Factor MEMS Variable Capacitor in Standard CMOS Technology
Author/Authors :
Ashoori، Mina نويسنده Department of Electrical Engineering , Sadjad Institute of Higher Education , Mashhad , Iran , , Nabovati، Hooman نويسنده Department of Electrical Engineering , Sadjad Institute of Higher Education, Mashhad , Iran. ,
Issue Information :
فصلنامه با شماره پیاپی 7 سال 2013
Abstract :
This article is organized to represent the work specifications of the micro electro mechanical gap-tuning capacitors and to increase both of the tuning range and quality factor. A three-plate capacitor which can be fabricated by standard 0.18 ?m CMOS technology is designed and simulated. The simulation of the capacitor was done using the EM3DS software and the simulation results showed the tuning range of 100%, that is 2 times higher than the tuning range of the conventional parallel plate capacitor. The plates of this capacitor are designed by using the available metal layers in the TSMC 0.18 ?m CMOS technology causing the series resistance to decrease and the quality factor increase to 300 in 1 GHZ.
Journal title :
Majlesi Journal of Telecommunication Devices
Journal title :
Majlesi Journal of Telecommunication Devices