Non-destructive structural analysis of surface blistering by TEM and EELS in a reflection configuration

We present a non-destructive structural analysis of blistering on silicon surfaces heavily irradiated by D+ and He+ ions using grazing incidence electron microscopy and electron energy-loss spectroscopy. The images and their electron diffraction indicate that the blister wall consists of a mixture of amorphous and nano-crystalline silicon in the D+ implanted sample, whereas the He+ implanted blister shows an amorphous wall containing a high density of bubbles. The presented method enables us to delineate the cross-sectional view of the blister structure. The thickness of the top skin was found to be much less than the projected range of D+ or He+. The presented results suggest that surface diffusion is enhanced by the local stress concentration as well as a chemical effect.