Title of article
ICRF siliconization in HT-7 superconducting tokamak
Author/Authors
Gong، نويسنده , , Xiangzu and Li، نويسنده , , Jiangang and Wan، نويسنده , , Baonian and Zhao، نويسنده , , Yanpin and Zhang، نويسنده , , Xiaodong and Gu، نويسنده , , Xuemao and Li، نويسنده , , Chenfu and Zhen، نويسنده , , Min and Jie، نويسنده , , Yinxian and Zhang، نويسنده , , Shouyin and Wu، نويسنده , , Zhenwei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
1171
To page
1175
Abstract
A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.
Keywords
Siliconization
Journal title
Journal of Nuclear Materials
Serial Year
2001
Journal title
Journal of Nuclear Materials
Record number
1348980
Link To Document