Author/Authors :
Gong، نويسنده , , Xiangzu and Li، نويسنده , , Jiangang and Wan، نويسنده , , Baonian and Zhao، نويسنده , , Yanpin and Zhang، نويسنده , , Xiaodong and Gu، نويسنده , , Xuemao and Li، نويسنده , , Chenfu and Zhen، نويسنده , , Min and Jie، نويسنده , , Yinxian and Zhang، نويسنده , , Shouyin and Wu، نويسنده , , Zhenwei، نويسنده ,
Abstract :
A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.
