Effect of defect sink strengths on the radiation induced segregation in binary alloys

The radiation induced segregation (RIS) of alloy components at a flat free surface is investigated analytically and numerically. The segregation reversal, where depletion of a component at the surface is changed by its accumulation, is investigated. It is shown that the criterion for RIS reversal can be given in terms of some critical temperature. Dependencies of the critical temperatures on the partial damage efficiencies as well as on defect sink strengths are investigated in detail.