Production behavior of irradiation defects in vitreous silica under ion beam irradiation

The production behavior of irradiation defects in vitreous silica was studied by an in situ luminescence measurement technique under ion beam irradiation of H+ and He+. No apparent difference was observed in the luminescence spectra of specimens of different OH contents. The temperature dependence of the luminescence intensity at 280 and 460 nm was measured, and analyzed by considering the production mechanisms and kinetics of the irradiation defects of oxygen deficiency centers.