Title of article
Study in chemical bonding states of SiC films before and after hydrogen ion irradiation
Author/Authors
Huang، نويسنده , , N.K. and Xiong، نويسنده , , Q. and Wang، نويسنده , , D.Z.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
152
To page
157
Abstract
SiC films on stainless steel prepared by ion beam mixing were irradiated by hydrogen ion beam with an energy of 5 keV and a dose of 1 × 1022 ions/m2. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand how the chemical sputtering processes of carbon in SiC films takes place.
Journal title
Journal of Nuclear Materials
Serial Year
2003
Journal title
Journal of Nuclear Materials
Record number
1358170
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