Author/Authors :
Matsuo، نويسنده , , Genichiro and Shibayama، نويسنده , , Tamaki and Kishimoto، نويسنده , , Hirotatsu and Hamada، نويسنده , , Kouichi and Watanabe، نويسنده , , Seiichi، نويسنده ,
Abstract :
W and SiC joining has an attractive feature for high-temperature energy conversion systems. However, it is unclear and that is necessary to study the microstructure of the reaction phase between W and SiC by using the thermal diffusion bonding method. This work demonstrates the strengthening mechanism of W and SiC joining through a microstructure analysis of the reaction phase by FE-TEM/EDS and the observation of the interface in W and SiC after the crack propagation in HVEM. The reaction phase was amorphous, with a gap from 500 to 600 nm between W and SiC. Fine precipitates with a diameter of several tens nanometer were formed in the reaction phase. The reaction phase and precipitates did not match the chemical composition of the equilibrium compound. It is conceivable that the reaction phase and precipitates exist as a non-equilibrium condition before they reach equilibrium condition.
