Ionizing radiation induced helium release for hot pressed SiC

Ionizing radiation induced helium release and diffusion in SiC has been assessed. Hot pressed SiC was pre-implanted with He+ ions at 45 keV, and then mounted in a special irradiation chamber in the beam line of a Van de Graaff electron accelerator. Release of the implanted helium was measured during 1.8 MeV electron irradiation as a function of temperature (15–450 °C) and irradiation time (dose), and compared with results obtained without irradiation. Ionizing radiation enhanced helium release from SiC has been clearly observed, and the relative change of He desorption as a function of ionizing radiation dose and temperature evaluated. The results are consistent with He release from discrete trapping centres.