Study of hydrogen effects on microstructural development of SiC base materials under simultaneous irradiation with He- and Si-ion irradiation conditions

The microstructural development of SiC/SiC composite under the multi-ion beam irradiation up to 10 dpa at 800 and 1000 °C was investigated by transmission electron microscopy. Microstructural evolution in each composites component was dependent on the component grain structures, the helium or hydrogen implanting mode and the irradiation temperature. In this study, the synergistic effects of H and He gas elements on cavity formation in the composite component are discussed.