Author/Authors :
Kodama، نويسنده , , M. Oyaidzu، نويسنده , , M and Sasaki، نويسنده , , M and Kimura، نويسنده , , H and Morimoto، نويسنده , , Y and Oya، نويسنده , , Y and Matsuyama، نويسنده , , M and Sagara، نويسنده , , A and Noda، نويسنده , , N and Okuno، نويسنده , , K، نويسنده ,
Abstract :
Characterization of the structure and the chemical state of boron in boron coating film were performed by XRD and TDS measurements. The structure of the boron coating film was shown to be amorphous by XRD measurement. By changing the total pressure, the discharge power, and the substrate temperature, the growth rate of the boron coating film and the hydrogen retention were evaluated. It was found that the growth rate decreased as the total pressure increased, and increased with an increase in the discharge power. For the substrate temperature dependence, the hydrogen retention decreased as the substrate temperature increased. However, the growth rate remained constant, although the hydrogen retention decreased as the substrate temperature increased. This indicates that the growth rates are not controlled by the chemical form of B–H bond, but by that of B-B bond. In the TDS analysis, hydrogen atoms released from B–H–B and B–H bonds were observed.
