Author/Authors :
van Rooyen، نويسنده , , I.J. and Engelbrecht، نويسنده , , J.A.A. and Henry، نويسنده , , A. and Janzén، نويسنده , , E. and Neethling، نويسنده , , J.H. and van Rooyen، نويسنده , , P.M.، نويسنده ,
Abstract :
The effect of P-doping and grain size of polycrystalline 3C–SiC on the infrared reflectance spectra is reported. The relationship between grain size and full width at half maximum (FWHM) suggest that the behavior of the 3C–SiC with the highest phosphorous doping level (of 1.2 × 1019 at. cm−3) is different from those with lower doping levels (<6.6 × 1018 at. cm−3). It is also further demonstrated that the plasma resonance frequency (ωp) is not influenced by the grain size.
