Dynamic hydrogen isotope behavior and its chemical states in SiC by XPS and TDS technique

Deuterium ions were implanted into SiC to elucidate the interaction mechanism between deuterium and SiC. The chemical states of Si and C were studied by X-ray photoelectron spectroscopy (XPS) and thermal desorption behavior of deuterium was analyzed by thermal desorption spectroscopy (TDS). It was found that the peak energies of C 1s and Si 2p by XPS were, respectively, shifted to higher and lower binding energy side by the deuterium ion irradiation. These results indicate that the deuterium was trapped by Si and C. In the TDS analysis, two desorption peaks were observed at around 800 K and 1000 K, respectively. These results show that the low temperature stage was induced by the deuterium bound to C and the high temperature stage corresponded to the desorption of deuterium bound to Si, respectively. The hydrogen isotope trapping mechanism was discussed by taking account of the reported quantum chemical analyses.