Author/Authors :
Jiao، نويسنده , , L. and Chen، نويسنده , , A. and Myers، نويسنده , , M.T. and General، نويسنده , , M.J. and Shao، نويسنده , , L. and Zhang، نويسنده , , X. and Wang، نويسنده , , H.، نويسنده ,
Abstract :
Interface mitigation effects on ion irradiation induced damage are explored in TiN/MgO nanolayer thin films with nanolayer thickness varied from 10 nm to 50 nm. After ion irradiation with He ions to a fluence of 4 × 1016 cm−2 at 50 keV, no hardness variation is observed in the nanolayer samples based on the nano-indentation measurement, and high resolution TEM indicates no obvious ion damage in the MgO layers in the nanolayered samples. However, single layer MgO film shows a significant hardness increase of ∼20% and high density point defect clusters (∼5 nm) are clearly identified. These results suggest that, in this system, nanolayer interfaces could act as effective point defect sinks and be responsible for the enhanced radiation tolerance properties.
