Thermal conductivity of SiC after heavy ions irradiation

In this study, we performed irradiation experiments on α-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 × 1014 ions cm−2). This energy results in an irradiated layer of about 9.6 μm for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation.