Title of article
Low photo-leakage current amorphous silicon thin film transistor with a thin active layer
Author/Authors
Choi، نويسنده , , Young Jin and Lim، نويسنده , , Byeong Chun and Woo، نويسنده , , Keun Ho Ryu، نويسنده , , Jai Il and Jang، نويسنده , , Jin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
1299
To page
1303
Abstract
We developed a novel etch stopper (ES) hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) with an ultra-thin active layer. The photo-leakage currents of an ES a-Si:H TFT under back-light are smaller when the optical absorption in the a-Si:H is smaller. The field-effect mobility, subthreshold slope, and on/off current ratio of the TFT were 1 cm2/Vs, 0.54 V/dec, and ∼107, respectively.
Journal title
Journal of Non-Crystalline Solids
Serial Year
2000
Journal title
Journal of Non-Crystalline Solids
Record number
1364123
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