Low photo-leakage current amorphous silicon thin film transistor with a thin active layer

We developed a novel etch stopper (ES) hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) with an ultra-thin active layer. The photo-leakage currents of an ES a-Si:H TFT under back-light are smaller when the optical absorption in the a-Si:H is smaller. The field-effect mobility, subthreshold slope, and on/off current ratio of the TFT were 1 cm2/Vs, 0.54 V/dec, and ∼107, respectively.