Author/Authors :
Martin، نويسنده , , G. and Garcia، نويسنده , , P. and Labrim، نويسنده , , H. and Sauvage، نويسنده , , T. and Carlot، نويسنده , , G. and Desgardin، نويسنده , , P. and Barthe، نويسنده , , M.F. and Piron، نويسنده , , J.P.، نويسنده ,
Abstract :
Helium implanted uranium dioxide sintered samples were studied using nuclear reaction analysis prior to and following heavy ion irradiations and temperature anneals at 800 °C and 1100 °C. The results show that the heavy ion irradiations do not produce measurable long range movement of helium atoms. However, the ion irradiations do affect the behaviour of helium during subsequent temperature anneals. As regards the 800 °C anneal, the reduced mobility of helium in the ion-irradiated samples is interpreted as resulting from enhanced helium atom segregation produced by the ion-irradiation. Conversely at 1100 °C, the initial heavy ion irradiation appears to produce a greater than expected movement of helium within the bulk of the sample which could be an indication of defect assisted helium diffusion. Thermal diffusion coefficients are also reported at 800 °C and 1100 °C based on an analysis using a one-dimensional diffusion model.