Author/Authors :
Hashizume، نويسنده , , K. and Masuda، نويسنده , , J. and Otsuka، نويسنده , , T. and Tanabe، نويسنده , , T. and Hatano، نويسنده , , Y. and Nakamura، نويسنده , , Y. and Nagasaka، نويسنده , , T. and Muroga، نويسنده , , T.، نويسنده ,
Abstract :
Tritium diffusion behavior in a V–4Cr–4Ti (NIFS-Heat-2) alloy has been examined with a tritium tracer technique. Firstly, a small amount of tritium (T) was implanted into the specimen surface, and then the specimen was diffusion-annealed at temperatures ranging from 373 K to 573 K. The diffusion depth profile of T in the specimen was measured with a tritium imaging plate (IP) technique to determine the diffusion coefficient. The obtained diffusion coefficient of tritium in V–4Cr–4Ti is expressed as D t ( cm 2 / s ) = ( 7.5 ± 0.2 ) × 10 - 4 exp ( - 0.13 ( eV ) / kT ) , which is lower than that in pure vanadium, and is comparable with literature values of protium in a V–4Ti alloy taking the isotope mass effect into consideration.
