Author/Authors :
Nakahata، نويسنده , , Toshihiko and Yoshikawa، نويسنده , , Akira and Oyaidzu، نويسنده , , Makoto and Oya، نويسنده , , Yasuhisa and Ishimoto، نويسنده , , Yuki and Kizu، نويسنده , , Kaname and Yagyu، نويسنده , , Jyunichi and Ashikawa، نويسنده , , Naoko and Nishimura، نويسنده , , Kiyohiko and Miya، نويسنده , , Naoyuki and Okuno، نويسنده , , Kenji، نويسنده ,
Abstract :
Retention and desorption behavior of deuterium implanted into pure boron films has been studied by means of the secondary ion mass spectroscopy. It was found that the process controlling deuterium desorption depended on the temperature. At stage 1, below 573 K, the desorption of deuterium from B–D–B bonds dominated and its diffusion was the rate-determining process. Above 573 K, deuterium was mainly desorbed from B–D bonds, and recombination was the rate-determining process. The effective molecular recombination rate constant of deuterium bound to boron associated with B–D bond was determined by an isothermal annealing experiment.
