Title of article
Recovery of neutron-induced damage of Si analyzed by thermal expansion measurement
Author/Authors
Yamazaki، نويسنده , , Saishun and Yoshida، نويسنده , , Katsumi and Yano، نويسنده , , Toyohiko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
328
To page
332
Abstract
Single-crystal silicon was neutron-irradiated up to a fluence of 3.0 × 1023 n/m2 (En > 0.1 MeV) at 120–150 °C, and up to a fluence of 6.9 × 1023 n/m2 at 300 °C. Changes in macroscopic length and FT-IR spectra were observed after irradiation and after post-irradiation isochronal annealing up to 1000 °C. Irradiation-induced swelling was 0.01% in both specimens. Up to 1000 °C, relatively large shrinkage was observed around 600 °C in both specimens by precise dilatometric method. There was a difference of the recovery rate between two irradiation conditions. From the FT-IR spectra, it is supposed that the Si irradiated at 120–150 °C includes more small vacancy clusters than the Si irradiated at 300 °C, thus recovery of the former Si was faster than that of the latter Si.
Journal title
Journal of Nuclear Materials
Serial Year
2009
Journal title
Journal of Nuclear Materials
Record number
1366226
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