Author/Authors :
Z.D. Kovalyuk، نويسنده , , Z.D. and Politanska، نويسنده , , O.A. and Tkachenko، نويسنده , , V.G. and Maksymchuk، نويسنده , , I.N. and Dubinko، نويسنده , , V.V. and Savchuk، نويسنده , , A.I.، نويسنده ,
Abstract :
The influence of γ-irradiation (E = 3 MeV) over a large dose range 0.14–140 kGy on the electrical and photoelectric parameters of p–n-InSe and intrinsic oxide–p-InSe photoconvertors has been investigated. The detected changes in current–voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current for the structures are explained by the formation of radiation-induced point defects. A comparison to silicon photodiodes irradiated at analogous conditions has been carried out. On the basis of the absence of essential changes of the characteristics of the homo- and hetero-junctions based on III–VI layered semiconductors even at the maximum irradiation doses these junctions are recommended as radiation-resistant photodetectors for operation under γ-irradiation.
