Application of the single-scan calorimetric technique to the crystallization of the semiconducting Sb0.16As0.29Se0.55 alloy

A procedure has been considered for analyzing the change with time of the volume fraction crystallized and for calculating the kinetic parameters (activation energy, kinetic exponent and frequency factor) of non-isothermal reactions in materials involving formation and growth of nuclei. By using the assumptions of extended volume and random nucleation, a particular expression of the fraction crystallized as a function of time has been derived in isothermal crystallization processes. The application of the crystallization rate equation to the non-isothermal processes has been carried out, and the kinetic parameters have been deduced by using the calorimetric techniques of data analysis of single-scan and multiple-scan. The theoretical method considered has been applied to the crystallization kinetics of the semiconducting alloy Sb0.16As0.29Se0.55. The agreement between the kinetic parameters obtained according to both techniques confirms the reliability and accuracy of the single-scan technique when calculating the above-mentioned parameters in non-isothermal crystallization processes.