Author/Authors :
Bogomolova، Elena Sergeevna نويسنده Department of Economics and Management of Enterprise Bogomolova, Elena Sergeevna , L.D and Jachkin، نويسنده , , V.A and Prushinsky، نويسنده , , S.A and Stryahilev، نويسنده , , D and Sazonov، نويسنده , , A and Nathan، نويسنده , , A، نويسنده ,
Abstract :
Electron paramagnetic resonance (EPR) study of silicon nitride films prepared at 120 °C by plasma enhanced chemical vapor deposition (PECVD) is reported. The complex EPR line with contribution from surface defects and hyperfine structure (HFS) is observed in N-rich samples. The HFS spectrum with peak-to-peak separation ∼8 G cannot be attributed to known defect models. However, it is well described by spin-Hamiltonian of unpaired electron interacting with three equivalent nuclei having nuclear spin of 1. The structural identification of the defect responsible for the HFS is discussed.
