Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cells

The properties of the B-doped hetero-structured silicon carbon alloy (SiCX) films deposited by hot-wire CVD using SiH4, C2H6, B2H6 and H2 under a low film surface temperature, TS, condition have been studied. The carbon content, C/(Si + C), was controlled with the C2H6/SiH4 ratio in the low TS deposition. The optical energy gap, EO4, in the low TS sample with small C/(Si + C) was almost same as that of the high TS sample with large C/(Si + C). The dark conductivity (1.05 × 10−1 S/cm) of the low TS sample deposited with B2H6/SiH4 of 0.3% showed much larger than that of the high TS sample with the almost same EO4.