Author/Authors :
M and Kocka، نويسنده , , J. and Mates، نويسنده , , T. and Fojt??k، نويسنده , , P. and Ledinsk?، نويسنده , , M. and Luterov?، نويسنده , , K. and Stuchl??kov?، نويسنده , , H. and Stuchl??k، نويسنده , , J. and Pelant، نويسنده , , I. and Fejfar، نويسنده , , A. and Ito، نويسنده , , M. and Ro، نويسنده , , K. and Uyama، نويسنده , , H.، نويسنده ,
Abstract :
Changes in the growth of thin silicon films at very low substrate temperatures (35 °C < TS < 100 °C) near the a-Si:H/μc-Si:H transition region are illustrated using RMS roughness, crystallinity and hydrogen content measurements together with the corresponding evolution of the optoelectronic properties: dark conductivity σD, its activation energy Ea and prefactor σ0 as well as the ambipolar diffusion length Ldiff. The role of hydrogen content, which increases at lower TS, is studied in relation to grain boundary formation.
